Simple technique for integrating compact silicon devices within optical fibers (Articolo in rivista)

Type
Label
  • Simple technique for integrating compact silicon devices within optical fibers (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1364/OL.39.000861 (literal)
Alternative label
  • Micco, Alessandro; Ricciardi, Armando; Quero, Giuseppe; Crescitelli, Alessio; Bock, Wojtek; Cusano, Andrea (2014)
    Simple technique for integrating compact silicon devices within optical fibers
    in Optics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Micco, Alessandro; Ricciardi, Armando; Quero, Giuseppe; Crescitelli, Alessio; Bock, Wojtek; Cusano, Andrea (literal)
Pagina inizio
  • 861 (literal)
Pagina fine
  • 864 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/record/display.url?eid=2-s2.0-84897404079&origin=inward (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 39 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Universita degli Studi del Sannio; Consiglio Nazionale delle Ricerche; Universite du Quebec en Outaouais (literal)
Titolo
  • Simple technique for integrating compact silicon devices within optical fibers (literal)
Abstract
  • In this work, we present a simple fabrication process enabling the integration of a subwavelength amorphous silicon layer inside optical fibers by means of the arc discharge technique. To assess our method, we have fabricated a compact in-line Fabry-Perot interferometer consisting of a thin (<1 ?m) a-Si:H layer completely embedded within a standard single-mode optical fiber. The device exhibits low loss (1.3 dB) and high interference fringe visibility (~80%) both in reflection and transmission, due to the high refractive index contrast between silica and a-Si:H. A high linear temperature sensitivity up to 106 pm/°C is demonstrated in the range 120°C-400°C. The proposed interferometer is attractive for point monitoring applications as well as for ultrahigh-temperature sensing in harsh environments. © 2014 Optical Society of America. (literal)
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