Intrinsic origin of interface states and band-offset profiling of nanostructured LaAlO3/ SrTiO3 heterojunctions probed by element-specific resonant spectroscopies (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Intrinsic origin of interface states and band-offset profiling of nanostructured LaAlO3/ SrTiO3 heterojunctions probed by element-specific resonant spectroscopies (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.90.035124 (literal)

Alternative label

• Drera, Giovanni; Salvinelli, Gabriele; Bondino, Federica; Magnano, Elena; Huijben, Mark; Brinkman, Alexander; Sangaletti, L. (2014)
  Intrinsic origin of interface states and band-offset profiling of nanostructured LaAlO3/ SrTiO3 heterojunctions probed by element-specific resonant spectroscopies
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Drera, Giovanni; Salvinelli, Gabriele; Bondino, Federica; Magnano, Elena; Huijben, Mark; Brinkman, Alexander; Sangaletti, L. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-84904651587&origin=inward (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 90 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Universita Cattolica del Sacro Cuore, Brescia; Laboratorio Nazionale TASC; MESA Institute for Nanotechnology (literal)

Titolo

• Intrinsic origin of interface states and band-offset profiling of nanostructured LaAlO3/ SrTiO3 heterojunctions probed by element-specific resonant spectroscopies (literal)

Abstract

• The origin of electronic states at the basis of the 2DEG found in conducting LaAlO3/SrTiO3 interfaces (5 u.c. LaAlO3) is investigated by resonant photoemission experiments at the Ti L2,3 and La M4,5 edges. As shown by the resonant enhancement at the Ti L2,3 edge, electronic states at EF receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO3 and SrTiO3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO3) interface. © 2014 American Physical Society. (literal)

Prodotto di

• MD.P04.013.001 Studio della struttura elettronica e delle proprietà magnetiche di sistemi inorganici, organici e nanostrutturati (MD.P04.013.002) (Modulo)

Autore CNR

• ELENA MAGNANO (Persona)
• FEDERICA BONDINO (Unità di personale interno)

Incoming links:

Autore CNR di

• FEDERICA BONDINO (Unità di personale interno)
• ELENA MAGNANO (Persona)

Prodotto

• MD.P04.013.001 Studio della struttura elettronica e delle proprietà magnetiche di sistemi inorganici, organici e nanostrutturati (MD.P04.013.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)