Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/jp407411k (literal)

Alternative label

• Tissot, Heloise; Gallet, Jean-Jacques; Bournel, Fabrice; Naitabdi, Ahmed; Pierucci, Debora; Bondino, Federica; Magnano, Elena; Rochet, Francois; Finocchi, Fabio (2014)
  Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature
  in Journal of physical chemistry. C
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Tissot, Heloise; Gallet, Jean-Jacques; Bournel, Fabrice; Naitabdi, Ahmed; Pierucci, Debora; Bondino, Federica; Magnano, Elena; Rochet, Francois; Finocchi, Fabio (literal)

Pagina inizio

• 1887 (literal)

Pagina fine

• 1893 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 118 (literal)

Rivista

• Journal of physical chemistry. C (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Pierre & Marie Curie University - Paris 6; Centre National de la Recherche Scientifique (CNRS); Synchrotron SOLEIL; IOM CNR; Pierre & Marie Curie University - Paris 6; Centre National de la Recherche Scientifique (CNRS) (literal)

Titolo

• Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature (literal)

Abstract

• The adsorption of tetraethoxysilane (TEOS, Si[OC2H5](4)) on the Si(001)-2 x 1 surface at 300 K is studied through a joint experimental and theoretical approach, combining scanning tunneling microscopy (STM) and synchrotron radiation X-ray photoelectron spectroscopy (XPS) with first-principles simulations within the density functional theory (DFT). XPS shows that all Si-O bonds within the TEOS molecules are broken upon adsorption, releasing one Si atom per dissociated molecule, while the ethoxy (-OC2H5) groups form new Si-O bonds with surface Si dimers. A comparison between experimental STM images and DFT adsorption configurations shows that the four ethoxy groups bind to two second-neighbor silicon dimers within the same row, while the released silicon atom is captured as a monomer on an adjacent silicon dimer row. Additionally, the surface displays alternate ethoxy- and Si adatom-covered rows as TEOS coverage increases. This patterning, which spontaneously forms upon TEOS adsorption, can be used as a template for the nanofabrication of one-dimensional self-organized structures on Si(001)-2 x 1. (literal)

Prodotto di

• MD.P04.013.001 Studio della struttura elettronica e delle proprietà magnetiche di sistemi inorganici, organici e nanostrutturati (MD.P04.013.002) (Modulo)

Autore CNR

• ELENA MAGNANO (Unità di personale interno)
• FEDERICA BONDINO (Persona)

Incoming links:

Autore CNR di

• FEDERICA BONDINO (Persona)
• ELENA MAGNANO (Unità di personale interno)

Prodotto

• MD.P04.013.001 Studio della struttura elettronica e delle proprietà magnetiche di sistemi inorganici, organici e nanostrutturati (MD.P04.013.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of physical chemistry. C (Rivista)