Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (Articolo in rivista)

Type
Label
  • Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mee.2012.11.024 (literal)
Alternative label
  • Carta, S.; Bagni, R.; Giovine, Ennio; Foglietti, Vittorio; Evangelisti, Florestano; Notargiácomo, Andrea (2013)
    Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Carta, S.; Bagni, R.; Giovine, Ennio; Foglietti, Vittorio; Evangelisti, Florestano; Notargiácomo, Andrea (literal)
Pagina inizio
  • 230 (literal)
Pagina fine
  • 233 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/record/display.url?eid=2-s2.0-84885173133&origin=inward (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 110 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Consiglio Nazionale delle Ricerche; Universita degli Studi Roma Tre (literal)
Titolo
  • Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques (literal)
Abstract
  • We present the fabrication and characterization of novel high density field emitter arrays (FEAs) on CVDgrown epitaxial germanium on (001) silicon. In particular we propose a heterostructure made up of silicon as substrate and of germanium as active layer, exploiting the infrared transparency of Si and the infrared sensitivity of Ge to realize a semi-transparent photo-assisted electron beam source. We used a completely dry etching process in fluorinated gases (SF6) due to its significant under-etching for both silicon and germanium. High aspect ratio silicon and germanium FEAs, with minimum tip radii of 25 nm and 40 nm, respectively, and lower aspect ratio Ge/Si FEAs with minimum tip radii of 50 nm were fabricated. The realized FEAs show good emission behavior with field emission characteristics straight related to tip geometry: low electric field threshold for silicon and germanium tips (<18 V/?m) and enhancement factor of more than 250 and 130, respectively; conversely for the epitaxial germanium we obtained 32 V/lm for electric field threshold and 70 for enhancement factor. Current emission time stability for silicon, for germanium and for Ge/Si field emitter arrays were demonstrated. © 2012 Elsevier B.V. All rights reserved. (literal)
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