Anomalous suppression of the shot noise in a nanoelectromechanical system (Articolo in rivista)

Type
Label
  • Anomalous suppression of the shot noise in a nanoelectromechanical system (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Haupt, F; Cavaliere, F; Fazio, R; Sassetti, M (2006)
    Anomalous suppression of the shot noise in a nanoelectromechanical system
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Haupt, F; Cavaliere, F; Fazio, R; Sassetti, M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 74 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy; Univ Genoa, LAMIA, INFM, CNR, I-16146 Genoa, Italy; SISSA, I-34014 Trieste, Italy; CNR, INFM, NEST, I-56126 Pisa, Italy; Scuola Normale Superiore, I-56126 Pisa, Italy (literal)
Titolo
  • Anomalous suppression of the shot noise in a nanoelectromechanical system (literal)
Abstract
  • In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative changes in the transport properties of the dot, depending on the strength of the electron-phonon coupling and on the applied voltage. In particular, critical thresholds in voltage and relaxation are found such that a suppression below 1/2 of the Fano factor is possible. Additionally, the current is either enhanced or suppressed by increasing relaxation, depending on bias being greater or smaller than the above threshold. These results exist for any strength of the electron-phonon coupling and are confirmed by a four states toy model. (literal)
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