GaN Field Effect Transistors with Integrated Antennas for THz Heterodyne Detectors (Contributo in atti di convegno)

Type
Label
  • GaN Field Effect Transistors with Integrated Antennas for THz Heterodyne Detectors (Contributo in atti di convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Alternative label
  • Dispenza, Massimiliano; Crispoldi, Flavia; Pantellini, Alessio; Nanni, Antonio; Lanzieri, Claudio; Di Gaspare, Alessandra; Giliberti, Valeria; Casini, Roberto; Ortolani, Michele; Giovine, Ennio; Evangelisti, Florestano (2013)
    GaN Field Effect Transistors with Integrated Antennas for THz Heterodyne Detectors
    in 43rd European Microwave Conference (EuMC)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dispenza, Massimiliano; Crispoldi, Flavia; Pantellini, Alessio; Nanni, Antonio; Lanzieri, Claudio; Di Gaspare, Alessandra; Giliberti, Valeria; Casini, Roberto; Ortolani, Michele; Giovine, Ennio; Evangelisti, Florestano (literal)
Pagina inizio
  • 748 (literal)
Pagina fine
  • 751 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Selex ES SpA (literal)
Titolo
  • GaN Field Effect Transistors with Integrated Antennas for THz Heterodyne Detectors (literal)
Abstract
  • We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown. (literal)
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