http://www.cnr.it/ontology/cnr/individuo/prodotto/ID289427
Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m) (Abstract/Poster in convegno)
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- Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m) (Abstract/Poster in convegno) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
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S. A. Khattak1, 2, M. Hayne1, L. Seravalli3, G.Trevisi3 and P. Frigeri3 (2014)
Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m)
in QD2014 - ?8th International Conference on Quantum, Pisa, Italia, may 11-16, 2014
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- S. A. Khattak1, 2, M. Hayne1, L. Seravalli3, G.Trevisi3 and P. Frigeri3 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
2Department of Physics, Abdul Wali Khan University Mardan, 23200, Pakistan
3CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma, Italy (literal)
- Titolo
- Physics of exciton wave function in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots for telecommunications wavelengths (1.3 - 1.6 ?m) (literal)
- Abstract
- We probe exciton confinement in strain-engineered metamorphic InAs/InxGaAs1-x/GaAs quantum dots (QDs), promising candidates for lasers operating at telecommunication wavelengths (1.3 - 1.6 ?m). InAs QDs are embedded in a metamorphic lower confining layer (LCL) and a metamorphic upper confining layer (UCL), using GaAs as a substrate. The wavelength emission is tuned by controlling two independent parameters: In content, x, in confining layers (CLs) and LCL thickness, d [1]. The former changes the band offset between QD and CLs and also affects QD-CL mismatch, f, which determines strain, while the latter only affects f. We have studied 31 such InAs/InxGa1-xAs/GaAs QD samples at 2 K using photoluminescence (PL) in magnetic fields, B, up to 15 T. Excitonic model [2] was used for results analysis. This allows us to probe properties of the exciton wave-function, and hence study the confinement of carriers in the dots. (literal)
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