Hydrogen-induced nanotunnel opening within semiconductor subsurface (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Hydrogen-induced nanotunnel opening within semiconductor subsurface (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1038/ncomms3800 (literal)

Alternative label

• Soukiassian, Patrick; Wimmer, Erich; Celasco, Edvige; Giallombardo, Claudia; Bonanni, Simon; Vattuone, Luca; Savio, Letizia; Tejeda, Antonio; Silly, Mathieu; D'angelo, Marie; Sirotti, Fausto; Rocca, Mario (2013)
  Hydrogen-induced nanotunnel opening within semiconductor subsurface
  in Nature communications; Nature Publishing Group, London (Regno Unito)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Soukiassian, Patrick; Wimmer, Erich; Celasco, Edvige; Giallombardo, Claudia; Bonanni, Simon; Vattuone, Luca; Savio, Letizia; Tejeda, Antonio; Silly, Mathieu; D'angelo, Marie; Sirotti, Fausto; Rocca, Mario (literal)

Pagina inizio

• 2800-1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 4 (literal)

Rivista

• Nature communications (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto Materiali per Elettronica e Magnetismo--CNR,Italy; Atomic Energy & Alternative Energies Commission (CEA); LOrme Merisiers; Mat Design Inc; Mat Design SARL; University of Genoa; Centre National de la Recherche Scientifique (CNRS); Centre National de la Recherche Scientifique (CNRS) (literal)

Titolo

• Hydrogen-induced nanotunnel opening within semiconductor subsurface (literal)

Abstract

• One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of ab-initio computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization. (literal)

Editore

• Nature Publishing Group (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Proprietà delle superfici e dei cluster di materiali nanostrutturati (MD.P06.002.001) (Modulo)

Autore CNR

• Luca Vattuone (Persona)
• LETIZIA SAVIO (Unità di personale interno)
• MARIO AGOSTINO ROCCA (Persona)

Incoming links:

Autore CNR di

• LETIZIA SAVIO (Unità di personale interno)
• MARIO AGOSTINO ROCCA (Persona)
• Luca Vattuone (Persona)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Proprietà delle superfici e dei cluster di materiali nanostrutturati (MD.P06.002.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nature communications (Rivista)

Editore di

• Nature Publishing Group (Editore)