On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO (Articolo in rivista)

Type
Label
  • On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4847615 (literal)
Alternative label
  • Lettieri 1a), S.; Capello 2), V.; Santamaria 2b), L.; Maddalena, P. 1,2) (2013)
    On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lettieri 1a), S.; Capello 2), V.; Santamaria 2b), L.; Maddalena, P. 1,2) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 103 (literal)
Rivista
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  • 4 (literal)
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  • 24 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Institute for Superconductors, Oxides and Innovative Materials, National Research Council (CNR-SPIN), U.O.S. Napoli, Via Cintia, I-80126 Napoli, Italy 2 Physics Department, University of Naples \"Federico II,\" Via Cintia I-80126 Napoli, Italy (literal)
Titolo
  • On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO (literal)
Abstract
  • The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3-5 x 10(13) cm(-2). (C) 2013 AIP Publishing LLC. (literal)
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