http://www.cnr.it/ontology/cnr/individuo/prodotto/ID288131
Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (Articolo in rivista)
- Type
- Label
- Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1149/05832.0023ecst (literal)
- Alternative label
Bencistà, Ilaria; Di Benedetto, Francesco ; Foresti, Maria Luisa; Lavacchi, Alessandro ; Vizza, Francesco; Miller, Hamish Andrew; Wang, Lianqin; Innocenti, Massimo (2014)
Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition
in ECS transactions; The Electrochemical Society, Pennington, New Jersey 08534-2839, (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bencistà, Ilaria; Di Benedetto, Francesco ; Foresti, Maria Luisa; Lavacchi, Alessandro ; Vizza, Francesco; Miller, Hamish Andrew; Wang, Lianqin; Innocenti, Massimo (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dipartimento di Chimica, Università di Firenze
Dipartimento di Scienze della Terra, Università di Firenze
ICCOM-CNR, Istituto dei Composti Organometalli (literal)
- Titolo
- Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (literal)
- Abstract
- Cu2SnZnS4-type compounds have attracted interest as low cost and high conversion efficiency solar cell devices, because of their appropriate band gap energies and absorption coefficients values. In the last years our group has developed an ongoing research aimed at the electrodeposition from aqueous solution of thin films of technological semiconductors. In this work, we exploited alternated electrodeposition of Cu, Sn, Zn and S by ECALD to obtain sulfide thin films, controlling the growth of the structures at the nanometric level. The study included the analysis of the electrochemical behavior of the solution containing the single elements, to assess the most efficient deposition of controlled amounts of material. By alternating deposition of the elements, growth of thin films has been obtained. Band gaps of the deposited materials exhibit modulation with sample composition and thickness. (literal)
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