Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (Articolo in rivista)

Type
Label
  • Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/05832.0023ecst (literal)
Alternative label
  • Bencistà, Ilaria; Di Benedetto, Francesco ; Foresti, Maria Luisa; Lavacchi, Alessandro ; Vizza, Francesco; Miller, Hamish Andrew; Wang, Lianqin; Innocenti, Massimo (2014)
    Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition
    in ECS transactions; The Electrochemical Society, Pennington, New Jersey 08534-2839, (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bencistà, Ilaria; Di Benedetto, Francesco ; Foresti, Maria Luisa; Lavacchi, Alessandro ; Vizza, Francesco; Miller, Hamish Andrew; Wang, Lianqin; Innocenti, Massimo (literal)
Pagina inizio
  • 23 (literal)
Pagina fine
  • 32 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 58 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 32 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Chimica, Università di Firenze Dipartimento di Scienze della Terra, Università di Firenze ICCOM-CNR, Istituto dei Composti Organometalli (literal)
Titolo
  • Electrodeposition of Semiconductors Thin Films with Different Composition and Band Gap Underpotential Deposition (literal)
Abstract
  • Cu2SnZnS4-type compounds have attracted interest as low cost and high conversion efficiency solar cell devices, because of their appropriate band gap energies and absorption coefficients values. In the last years our group has developed an ongoing research aimed at the electrodeposition from aqueous solution of thin films of technological semiconductors. In this work, we exploited alternated electrodeposition of Cu, Sn, Zn and S by ECALD to obtain sulfide thin films, controlling the growth of the structures at the nanometric level. The study included the analysis of the electrochemical behavior of the solution containing the single elements, to assess the most efficient deposition of controlled amounts of material. By alternating deposition of the elements, growth of thin films has been obtained. Band gaps of the deposited materials exhibit modulation with sample composition and thickness. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
data.CNR.it