Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors (Contributo in atti di convegno)

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  • Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors (Contributo in atti di convegno) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Alternative label
  • P. Fiorenza, G. Greco, M. Vivona, F. Giannazzo, R. Lo Nigro, F. Roccaforte (2014)
    Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors
    in 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technology (EXMATEC2014), Delphi (Greece), 18-20 June, 2014
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Fiorenza, G. Greco, M. Vivona, F. Giannazzo, R. Lo Nigro, F. Roccaforte (literal)
Pagina inizio
  • 193 (literal)
Pagina fine
  • 194 (literal)
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  • Proceedings of the 38th WOCSDICE Delphi (Greece) June 15-18th, 2014, Proc. of the 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014) and 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technology (EXMATEC2014) (literal)
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  • 2 (literal)
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  • CNR-IMM, Catania, Italy (literal)
Titolo
  • Nanoscale characterization of interfaces at gate dielectrics on compound semiconductors (literal)
Abstract
  • This paper presents a nanoscale approach for the characterization of interfaces at gate dielectrics on com-pound semiconductors (SiC and GaN). In particular, scanning capacitance microscopy was used to monitor the electrical modification of SiC under the gate region of MOS devices subjected to different post oxide deposition annealing (PDA) treatments. Thank to this technique, the dopant effects of PDA in N2O or POCl3 atmospheres could be quantified. Secondly, a nanoscale study on the local conduction through thin gate insulator layers (NiO) onto AlGaN/GaN system is presented. This approach used conductive atomic force microscopy (C-AFM). (literal)
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