Role of as in the anisotropic positioning of self-assembled InAs quantum dots (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Role of as in the anisotropic positioning of self-assembled InAs quantum dots (Contributo in atti di convegno) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/opl.2013.892 (literal)

Alternative label

• Arciprete, Fabrizio; Placidi, Ernesto; Magri, Rita; Fanfoni, Massimo; Balzarotti, Adalberto; Patella, Fulvia (2014)
  Role of as in the anisotropic positioning of self-assembled InAs quantum dots
  in MRS spring meeting 2013, San Francisco, 11-16/04/2013
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Arciprete, Fabrizio; Placidi, Ernesto; Magri, Rita; Fanfoni, Massimo; Balzarotti, Adalberto; Patella, Fulvia (literal)

Pagina inizio

• 3 (literal)

Pagina fine

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-84907046007&origin=inward (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 1551 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 1551 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Universita degli Studi di Roma Tor Vergata; Istituto Di Struttura Della Materia, Montellibreti; Universita degli Studi di Modena e Reggio Emilia (literal)

Titolo

• Role of as in the anisotropic positioning of self-assembled InAs quantum dots (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 9781605115283 (literal)

Abstract

• Progress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes (?FA/FA ?1-5%) caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth. (literal)

Prodotto di

• Microscopia a Scansione a Sonda Locale su sistemi nanostrutturati e materiali biologici (MD.P06.006.001) (Modulo)
• Institute of structure of matter (ISM) (Istituto)

Autore CNR

• ERNESTO PLACIDI (Unità di personale interno)

Incoming links:

Prodotto

• Institute of structure of matter (ISM) (Istituto)
• Microscopia a Scansione a Sonda Locale su sistemi nanostrutturati e materiali biologici (MD.P06.006.001) (Modulo)

Autore CNR di

• ERNESTO PLACIDI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)