Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (Articolo in rivista)

Type
Label
  • Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssa.201300130 (literal)
Alternative label
  • Narducci D.[ 1 ]; Lorenzi B.[ 1 ] ; Zianni X.[ 2,3 ]; Neophytou N.[ 5,4 ]; Frabboni S.[ 6,7 ]; Gazzadi G.C.[ 7 ]; Roncaglia A.[ 8 ] ; Suriano F.[ 8 ] (2014)
    Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys
    in Physica status solidi. A, Applications and materials science (Internet)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Narducci D.[ 1 ]; Lorenzi B.[ 1 ] ; Zianni X.[ 2,3 ]; Neophytou N.[ 5,4 ]; Frabboni S.[ 6,7 ]; Gazzadi G.C.[ 7 ]; Roncaglia A.[ 8 ] ; Suriano F.[ 8 ] (literal)
Pagina inizio
  • 1255 (literal)
Pagina fine
  • 1258 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84902532529&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 211 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 6 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Milano Bicocca, Dept Mat Sci, Milan, Italy [ 2 ] Technol Educ Inst Sterea Ellada, Dept Aircraft Technol, Psachna, Greece [ 3 ] NCSR Demokritos, Dept Microelect, IAMPPNM, Athens, Greece [ 4 ] TUV, Inst Microelect, Vienna, Austria [ 5 ] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England [ 6 ] Univ Modena & Reggio Emilia, Dept FIM, Modena, Italy [ 7 ] CNR Inst Nanosci S3, Modena, Italy [ 8 ] IMM CNR, Bologna, Italy (literal)
Titolo
  • Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (literal)
Abstract
  • In previous publications it was shown that the precipitation of silicon boride around grain boundaries may lead to an increase of the power factor in nanocrystalline silicon. Such an effect was further explained by computational analyses showing that the formation of an interphase at the grain boundaries along with high boron densities can actually lead to a concurrent increase of the electrical conductivity sigma and of the Seebeck coefficient S. In this communication we report recent evidence of the key elements ruling such an unexpected effect. Nanocrystalline silicon films deposited onto a variety of substrates were doped to nominal boron densities in excess of 1020cm-3 and were annealed up to 1000 degrees C to promote boride precipitation. Thermoelectric properties were measured and compared with their microstructure. A concurrent increase of sigma and S with the carrier density was found only upon formation of an interphase. Its dependency on the film microstructure and on the deposition and processing conditions will be discussed. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it