Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.778-780.665 (literal)

Alternative label

• Vivona, M.; Greco, G.; Di Franco, S.; Giannazzo, F.; Roccaforte, F.; Frazzetto, A.; Rascuna, S.; Zanetti, E.; Guarnera, A.; Saggio, M. (2014)
  Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC
  in Material Science Forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Vivona, M.; Greco, G.; Di Franco, S.; Giannazzo, F.; Roccaforte, F.; Frazzetto, A.; Rascuna, S.; Zanetti, E.; Guarnera, A.; Saggio, M. (literal)

Pagina inizio

• 665 (literal)

Pagina fine

• 668 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 778-780 (literal)

Rivista

• Material Science Forum (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, Catania, Italy STMicroelectronics, Catania, Italy (literal)

Titolo

• Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC (literal)

Abstract

• The knowledge of the temperature behavior of Ohmic contacts is an important issue to understand the device operation. This work reports on an electrical characterization as a function of the temperature carried out on nickel suicide (Ni2Si) Ohmic contacts, used both for n-type and p-type implanted 4H-SiC layers. The temperature dependence of the specific contact resistance suggested that a thermionic field emission mechanism dominates the current transport for contacts on p-type material, whereas a current transport by tunneling is likely occurring for the contacts on n-type implanted SiC. Furthermore, from the temperature dependence of the electrical characteristics, the activation energies for Al and P dopants were determined, resulting of similar to 145 meV and similar to 35 meV, respectively. The thermal stability of the electrical parameters has been demonstrated upon a long-term (up to similar to 100 hours) cycling in the temperature range 200-400 degrees C. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• MARILENA VIVONA (Unità di personale esterno)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Keywords of "Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)
• MARILENA VIVONA (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Material Science Forum (Rivista)

Insieme di parole chiave di

• Keywords of "Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n- and p-type implanted 4H-SiC" (Insieme di parole chiave)