Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology (Articolo in rivista)

Type
Label
  • Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2014.04.012 (literal)
Alternative label
  • Lo Nigro, Raffaella; Battiato, Sergio; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Malandrino, Graziella (2014)
    Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lo Nigro, Raffaella; Battiato, Sergio; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Malandrino, Graziella (literal)
Pagina inizio
  • 50 (literal)
Pagina fine
  • 55 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 563 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Catania, Italy University of Catania, Italy (literal)
Titolo
  • Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology (literal)
Abstract
  • Epitaxial nickel oxide (NiO) thin films have been grown by Metal Organic Chemical Vapor Deposition on AlGaN/GaN heterostructures. Critical growth parameters have been studied in order to optimize the deposition process of NiO films suitable for applications in GaN-based devices. In particular, a second generation precursor has been used as nickel source, namely the N,N,N',N'-tetramethylethylenediamine adduct of nickel bis 2-thenoyltrifluoroacetonate, using different deposition temperatures and oxygen flow values. Optimized operative conditions allowed the growth of epitaxial thin films which exhibited a permittivity of 11.7, close to the bulk value. The electrical characterization of the obtained epitaxial films pointed out to promising dielectric properties for AlGaN/GaN transistor technology. (C) 2014 Elsevier B.V. All rights reserved. (literal)
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