Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate (Articolo in rivista)

Type
Label
  • Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/2.0121408jss (literal)
Alternative label
  • Alassaad, K.; Vivona, M.; Souliere, V.; Doisneau, B.; Cauwet, F.; Chaussende, D.; Giannazzo, F.; Roccaforte, F.; Ferro, G. (2014)
    Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate
    in ECS Journal of Solid State Science and Technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alassaad, K.; Vivona, M.; Souliere, V.; Doisneau, B.; Cauwet, F.; Chaussende, D.; Giannazzo, F.; Roccaforte, F.; Ferro, G. (literal)
Pagina inizio
  • P285 (literal)
Pagina fine
  • P292 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 3 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Claude Bernard - Lyon 1 CNR-IMM, Catania, Italy Centre National de la Recherche Scientifique (CNRS) (literal)
Titolo
  • Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate (literal)
Abstract
  • In this work, we report on the effect of adding GeH4 during 3C-SiC heteroepitaxial growth on low off-axis 4H-SiC substrate using chemical vapor deposition technique. When added together with SiH4 and C3H8, GeH4 does not significantly modify the 3C layer quality which contains a high density of twin boundaries. But when it is introduced before the growth, i.e. during a surface pretreatment step at 1500 degrees C, a remarkable change in the layer morphology is seen. Furthermore for optimal GeH4 flux, twin boundaries are completely eliminated. Investigation of the results obtained when varying growth parameters (temperature, C/Si ratio, gas composition during the surface preparation) allowed proposing a mechanism leading to twin boundary elimination. It involves a transient homoepitaxial growth step followed by 3C nucleation when large terraces are formed by step faceting. Preliminary electrical characterizations of the twin free 3C-SiC layers, using conductive atomic force microscopy (c-AFM), are given. (C) 2014 The Electrochemical Society. All rights reserved. (literal)
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