Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 (Articolo in rivista)

Type
Label
  • Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s00339-013-7824-y (literal)
Alternative label
  • Fiorenza, P.; Swanson, L. K.; Vivona, M.; Giannazzo, F.; Bongiorno, C.; Frazzetto, A.; Roccaforte, F. (2014)
    Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
    in Applied physics. A, Materials science & processing (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fiorenza, P.; Swanson, L. K.; Vivona, M.; Giannazzo, F.; Bongiorno, C.; Frazzetto, A.; Roccaforte, F. (literal)
Pagina inizio
  • 333 (literal)
Pagina fine
  • 339 (literal)
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  • 115 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Catania, Italy STMicroelectronics, Catania, Italy (literal)
Titolo
  • Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 (literal)
Abstract
  • This paper compares the behavior of the gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition annealing (PDA) in N2O and POCl3. A significantly higher channel mobility was measured in 4H-SiC MOSFETs subjected to PDA in POCl3 (108 cm(2) V-1 s(-1)) with respect to N2O (19 cm(2) V-1 s(-1)), accompanying a reduction of the interface traps density. Hence, a different temperature coefficient of the mobility and of the threshold voltage was observed in the two cases. According to structural analysis, the gate oxide subjected to PDA in POCl3 showed a different surface morphology than that treated in N2O, as a consequence of the strong incorporation of phosphorous inside the SiO2 matrix during annealing. This latter explained the instability of the electrical behavior of MOS capacitors annealed in POCl3. (literal)
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