http://www.cnr.it/ontology/cnr/individuo/prodotto/ID283444

Organic light-emitting transistors with voltage-tunable lit area and full channel illumination (Articolo in rivista)

Type

Articolo in rivista (Classe)
Prodotto della ricerca (Classe)

Label

Organic light-emitting transistors with voltage-tunable lit area and full channel illumination (Articolo in rivista) (literal)

Anno

2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1002/lpor.201300066 (literal)

Alternative label

Toffanin S.; Capelli R.; Koopman W.; Generali G.; Cavallini S.; Stefani A.; Saguatti D.; Ruani G.; Muccini M. (2013)
Organic light-emitting transistors with voltage-tunable lit area and full channel illumination
in Laser & photonics reviews (Internet)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Toffanin S.; Capelli R.; Koopman W.; Generali G.; Cavallini S.; Stefani A.; Saguatti D.; Ruani G.; Muccini M. (literal)

Pagina inizio

1011 (literal)

Pagina fine

1019 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://www.scopus.com/inward/record.url?eid=2-s2.0-84887178585&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

7 (literal)

Rivista

Laser & photonics reviews (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

6 (literal)

Note

Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via Gobetti 101, Bologna, 40129, Italy; E.T.C. s.r.l, via Gobetti 101, Bologna, 40129, Italy (literal)

Titolo

Organic light-emitting transistors with voltage-tunable lit area and full channel illumination (literal)

Abstract

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that hold great promise for a variety of applications, including flat panel displays, integrated light sources for sensing and optical communication systems. The narrow illumination area within the device channel is considered intrinsic to the device architecture and is a severe technological drawback for all those applications where a controlled, wide and homogeneous emission area is required. Here it is shown that not only the position but also the extension of the emission area is voltage-tunable, and the entire channel of the transistor can be homogeneously illuminated. The modeling of the exciton distribution within the channel at the different bias conditions coupled to the modeling of the device emission profile highlights that excitons are spread through the entire channel width and across the bulk of the central emission layer of the p-channel/emitter/n-channel trilayer active heterostructure. Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that hold great promise for a variety of applications, including flat panel displays, integrated light sources for sensing and optical communication systems. The narrow illumination area within the device channel is considered intrinsic to the device architecture and is a severe technological drawback for all those applications where a controlled, wide and homogeneous emission area is required. Here it is shown that not only the position but also the extension of the emission area is voltage-tunable, and the entire channel of the transistor can be homogeneously illuminated. The modeling of the exciton distribution within the channel at the different bias conditions coupled to the modeling of the device emission profile highlights that excitons are spread through the entire channel width and across the bulk of the central emission layer of the p-channel/emitter/n-channel trilayer active heterostructure. © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (literal)

Prodotto di