Growth of defect-free GaP nanowires (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Growth of defect-free GaP nanowires (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/25/20/205601 (literal)

Alternative label

• Husanu E.[ 1,2 ]; Ercolani D.[ 1,2 ] ; Gemmi M.[ 3 ]; Sorba L.[ 1,2 ] (2014)
  Growth of defect-free GaP nanowires
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Husanu E.[ 1,2 ]; Ercolani D.[ 1,2 ] ; Gemmi M.[ 3 ]; Sorba L.[ 1,2 ] (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84899802162&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 20 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] NEST Scuola Normale Super, I-56127 Pisa, Italy [ 2 ] CNR, Ist Nanosci, I-56127 Pisa, Italy [ 3 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy (literal)

Titolo

• Growth of defect-free GaP nanowires (literal)

Abstract

• The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated as a function of group V flux and growth temperature. By increasing the tertiarybutyl phosphine flux we obtained nanowires with a stacking defect-free wurtzite crystal structure. Variation of growth temperature also had a profound impact on the crystal structure. Lowering the growth temperature from 600 to 560 °C and keeping constant both triethylgallium and tertiarybutyl phosphine precursor fluxes, the crystal structure of GaP NWs was drastically improved from a highly defective intergrowth of zinc-blende and wurtzite to a wurtzite crystal structure free of stacking defects. These results are compared to current literature on GaP NW growth, and we suggest that the low V/III ratio is the key ingredient for the high crystal quality of our GaP nanowires. © 2014 IOP Publishing Ltd. (literal)

Prodotto di

• Nanofotonica (MD.P06.020.002) (Modulo)

Autore CNR

• LUCIA SORBA (Unità di personale interno)
• ELENA HUSANU (Persona)
• DANIELE ERCOLANI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Growth of defect-free GaP nanowires" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• LUCIA SORBA (Unità di personale interno)
• DANIELE ERCOLANI (Unità di personale esterno)
• ELENA HUSANU (Persona)

Prodotto

• Nanofotonica (MD.P06.020.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

Insieme di parole chiave di

• Keywords of "Growth of defect-free GaP nanowires" (Insieme di parole chiave)