Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/25/5/055207 (literal)

Alternative label

• Tasco V.[ 1 ] ; Usman M.[ 2 ]; Giorgi M.D.[ 1 ]; Passaseo A.[ 1 ] (2014)
  Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Tasco V.[ 1 ] ; Usman M.[ 2 ]; Giorgi M.D.[ 1 ]; Passaseo A.[ 1 ] (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84892154124&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR, Ist Nanosci, Natl Nanotechnol Lab, I-73100 Lecce, Italy [ 2 ] Tyndall Natl Inst, Dyke Parade, Cork, Ireland (literal)

Titolo

• Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics (literal)

Abstract

• Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response. © 2014 IOP Publishing Ltd. (literal)

Prodotto di

• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.002) (Modulo)

Autore CNR

• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• VITTORIANNA TASCO (Persona)

Insieme di parole chiave

• Keywords of "Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• VITTORIANNA TASCO (Persona)

Prodotto

• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

Insieme di parole chiave di

• Keywords of "Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics" (Insieme di parole chiave)