Unexpected current lowering by a low work-function metal contact: Mg/SI-GaAs (Articolo in rivista)

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  • Unexpected current lowering by a low work-function metal contact: Mg/SI-GaAs (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.sse.2013.01.021 (literal)
Alternative label
  • Dubecky, F.; Dubecky, M.; Hubik, P.; Kindl, D.; Gombia, E.; Baldini, M.; Necas, V. (2013)
    Unexpected current lowering by a low work-function metal contact: Mg/SI-GaAs
    in Solid-state electronics; PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dubecky, F.; Dubecky, M.; Hubik, P.; Kindl, D.; Gombia, E.; Baldini, M.; Necas, V. (literal)
Pagina inizio
  • 72 (literal)
Pagina fine
  • 76 (literal)
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  • http://www.sciencedirect.com/science/article/pii/S0038110113000348 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82 (literal)
Rivista
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia; b Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, t?. 17. listopadu 12, CZ-77146 Olomouc, Czech Republic; c Institute of Physics, v.v.i., Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Praha 6, Czech Republic; d IMEM-CNR, Parco Area delle Scienze 37/a, I-43010 Fontanini-Parma, Italy; e Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava, Ilkovi?ova 3, SK-81219 Bratislava, Slovakia (literal)
Titolo
  • Unexpected current lowering by a low work-function metal contact: Mg/SI-GaAs (literal)
Abstract
  • The low-bias current-voltage characteristics of surface barrier diodes, based on semi-insulating GaAs (SI-GaAs) with different contact metals and area, are reported and analyzed in order to demonstrate the possibility of tuning their low-bias transport characteristics. Novel applications of SI-GaAs emerge for devices with low-current at low-bias requirements, as follows from the possibility of current lowering by as much as two orders of magnitude, achieved by manipulation of the contact metallization and the contact area. The lowest current is observed in the structure with small Mg top and large-area Ti/Pt bottom contact. Since the observed behavior contradicts the conventional ohmic bulk limited and thermionic emission transport models, alternative explanations are discussed. The strong blocking ability of the low-work function Mg contact was attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI-GaAs free carrier concentration. (C) 2013 Elsevier Ltd. All rights reserved. (literal)
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