Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction (Contributo in volume (capitolo o saggio))

Type

• Prodotto della ricerca (Classe)
• Contributo in volume (capitolo o saggio) (Classe)

Label

• Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/B978-0-444-59551-5.00003-0 (literal)

Alternative label

• Ferrari Claudio, Buffagni Elisa and Rossi Francesca (2013)
  Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction
  ELSEVIER SCIENCE B.V., AMSTERDAM (Paesi Bassi) in CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES AND NANOSTRUCTURES, 2ND EDITION, 2013
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ferrari Claudio, Buffagni Elisa and Rossi Francesca (literal)

Pagina inizio

• 75 (literal)

Pagina fine

• 111 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES AND NANOSTRUCTURES, 2ND EDITION (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMEM CNR Inst, Parco Area Sci 37-A, I-43124 Parma, Italy (literal)

Titolo

• Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-0-44-459549-2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Lamberti, C., Agostini, G. (literal)

Abstract

• In this chapter, the basics of the method for measuring the strain and composition in two-dimensional structures by means of high-resolution x-ray diffraction techniques and laboratory x-ray sources are presented. The method of x-ray diffraction to determine the composition and strain in semiconducting alloys is introduced. Comparison of these results with those determined by other analytical techniques has allowed to measure a deviation from the linear Vegard law in several semiconducting alloys. The study of a two-dimensional quantum system composed of InGaAs wetting and capping layers in low-density quantum dot (QD) nanostructures is reported and the in-depth distribution of indium in the wetting layer is evaluated. Some of the most cited theories describing the strain release in semiconductor heterostructures are introduced. The theory is extended to composition-graded heterostructures, which are of great interest for obtaining virtual substrates or strain-engineered heterostructures. Experimental results in the case of GaAlSb/GaSb single heterostructures and InGaAs/GaAs composition-graded heterostructures are reported. (literal)

Editore

• ELSEVIER SCIENCE B.V. (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR

• ELISA BUFFAGNI (Unità di personale esterno)
• FRANCESCA ROSSI (Persona)
• CLAUDIO FERRARI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR di

• CLAUDIO FERRARI (Unità di personale interno)
• ELISA BUFFAGNI (Unità di personale esterno)
• FRANCESCA ROSSI (Persona)

Editore di

• ELSEVIER SCIENCE B.V. (Editore)

Insieme di parole chiave di

• Keywords of "Chapter 3: Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction" (Insieme di parole chiave)