Variable temperature electrochemical strain microscopy of Sm-doped ceria (Articolo in rivista)

Type
Label
  • Variable temperature electrochemical strain microscopy of Sm-doped ceria (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/24/14/145401 (literal)
Alternative label
  • Amit Kumar1, Stephen Jesse1, Anna N Morozovska2, Eugene Eliseev3, Antonello Tebano4, Nan Yang4,5 and Sergei V Kalinin1 (2013)
    Variable temperature electrochemical strain microscopy of Sm-doped ceria
    in Nanotechnology (Bristol, Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Amit Kumar1, Stephen Jesse1, Anna N Morozovska2, Eugene Eliseev3, Antonello Tebano4, Nan Yang4,5 and Sergei V Kalinin1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84875173921&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 24 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 14 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA 2 Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, Prospekt Nauki, Kiev 03028, Ukraine 3 Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3, Krjijanovskogo, Kiev 03142, Ukraine 4 CNR SPIN and Dipartimento di Ingegneria Civile ed Ingegneria Informatica, Università di Roma Tor vergata, Via del Politecnico 1, Roma I-00133, Italy 5 Department of Chemical Sciences and Technologies, University of Roma 'Tor Vergata'and NAST Center, Rome, Italy (literal)
Titolo
  • Variable temperature electrochemical strain microscopy of Sm-doped ceria (literal)
Abstract
  • Variable temperature electrochemical strain microscopy has been used to study the electrochemical activity of Sm-doped ceria as a function of temperature and bias. The electrochemical strain microscopy hysteresis loops have been collected across the surface at different temperatures and the relative activity at different temperatures has been compared. The relaxation behavior of the signal at different temperatures has been also evaluated to relate kinetic process during bias induced electrochemical reactions with temperature and two different kinetic regimes have been identified. The strongly non-monotonic dependence of relaxation behavior on temperature is interpreted as evidence for water-mediated mechanisms. © 2013 IOP Publishing Ltd. (literal)
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