Silicon nanocrystals in carbide matrix (Articolo in rivista)

Type
Label
  • Silicon nanocrystals in carbide matrix (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.solmat.2014.05.003 (literal)
Alternative label
  • C. Summonte, M.Allegrezza, M.Bellettato, F.Liscio, M.Canino, A.Desalvo, J. López-Vidrier, S.Hernández, L.López-Conesa, S.Estradé, F.Peiró, B.Garrido, P. Lo?per, M.Schnabel, S.Janz, R.Guerra, S.Ossicini (2014)
    Silicon nanocrystals in carbide matrix
    in Solar energy materials and solar cells; ELSEVIER SCIENCE B.V., AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Summonte, M.Allegrezza, M.Bellettato, F.Liscio, M.Canino, A.Desalvo, J. López-Vidrier, S.Hernández, L.López-Conesa, S.Estradé, F.Peiró, B.Garrido, P. Lo?per, M.Schnabel, S.Janz, R.Guerra, S.Ossicini (literal)
Pagina inizio
  • 138 (literal)
Pagina fine
  • 149 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1016/j.solmat.2014.05.003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 128 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • -Consiglio NazionaledelleRicerche - Istituto perlaMicroelettronicaeiMicrosistemi(CNR-IMM) - via Gobetti101,40129Bologna,Italy -MIND-IN2UB - Departament d'Electrònica, UniversitatdeBarcelona - Martí iFranquès1,08028Barcelona,Spain -TEM-MAT,CCiT-UB - Centre Científic iTecnològic,UniversitatdeBarcelona - Solé iSabarís1,08028Barcelona,Spain -FraunhoferISE,Heidenhofstr.2,D-79110Freiburg,Germany -Centro InterdipartimentaleEn&TechandDipartimentodiScienzeeMetodidell'Ingegneria, UniversitàdegliStudidiModenaeReggioEmilia,viaAmendola 2 Pad.Morselli,42122ReggioEmilia,Italy (literal)
Titolo
  • Silicon nanocrystals in carbide matrix (literal)
Abstract
  • Ordered silicon nanocrystals in silicon carbide are produced by Plasma Enhanced Chemical Vapor Deposition by means of the multilayer approach followed by annealing at 1100 °C. The crystallization is verified by Raman scattering, X-ray diffraction, Transmission Electron Microscopy, and UV-Vis spectroscopy. The conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection. The final layout appears to be strongly influenced by the structural features of the as-deposited multilayer. Threshold values of Si-rich carbide sublayer thickness and Si-to-C ratio are identified in order to preserve the ordered structure. The crystallized fraction is observed to be correlated with the total silicon volume fraction. The constraints are examined through the use of ab-initio calculations of matrix-embedded silicon nanocrystals, as well as in terms of existing models for nanocrystal formation, in order to establish the role played by the interface energy on nanocrystal outgrowth, residual amorphous fraction, and continuous crystallization. A parameter space of formation of ordered Si nanocrystals is proposed. The diffusivity of carbon in the crystallized material is evaluated, and estimated to be around 10-16 cm2/s at 1100°C. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it