Boron diffusion in nanocrystalline 3C-SiC (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Boron diffusion in nanocrystalline 3C-SiC (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4880722 (literal)

Alternative label

• M. Schnabel, C. Weiss, M. Canino, T. Rachow, P. Löper, C. Summonte, S. Mirabella, S. Janz, and P.R. Wilshaw (2014)
  Boron diffusion in nanocrystalline 3C-SiC
  in Applied physics letters; AIP Publishing LLC, Melville, NY 11747 (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Schnabel, C. Weiss, M. Canino, T. Rachow, P. Löper, C. Summonte, S. Mirabella, S. Janz, and P.R. Wilshaw (literal)

Pagina inizio

• 213108-1 (literal)

Pagina fine

• 213108-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://dx.doi.org/10.1063/1.4880722 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 104 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg, Germany 2Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom 3CNR-IMM, Via Piero Gobetti 101, 40129 Bologna, Italy 4CNR-IMM MATIS, Via S. Sofia 64, 95123 Catania, Italy (literal)

Titolo

• Boron diffusion in nanocrystalline 3C-SiC (literal)

Abstract

• The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 ?C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100 ?C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 ?C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm?2 is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with DGBðTÞ ¼ ð3:1 ? 5:6Þ ? 107expð?5:0360:16 eV=kBTÞ cm2s?1. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron. (literal)

Editore

• AIP Publishing LLC (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CATERINA SUMMONTE (Persona)
• MARIACONCETTA CANINO (Unità di personale interno)
• SALVATORE MIRABELLA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• CATERINA SUMMONTE (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• MARIACONCETTA CANINO (Unità di personale interno)

Editore di

• AIP Publishing LLC (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)