Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement (Articolo in rivista)

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  • Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.88.035405 (literal)
Alternative label
  • Rubano, A.ab, Günter, T.a, Fink, T.a, Paparo, D.b , Marrucci, L.b, Cancellieri, C.cd, Gariglio, S.c, Triscone, J.-M.c, Fiebig, M.ae (2013)
    Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement
    in Physical review. B, Condensed matter and materials physics (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rubano, A.ab, Günter, T.a, Fink, T.a, Paparo, D.b , Marrucci, L.b, Cancellieri, C.cd, Gariglio, S.c, Triscone, J.-M.c, Fiebig, M.ae (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84880868851&partnerID=q2rCbXpz (literal)
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  • 88 (literal)
Rivista
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  • 3 (literal)
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  • Scopu (literal)
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  • a Helmholtz-Institut für Strahlen- und Kernphysik, Universität Bonn, Nussallee 14-16, 53115 Bonn, Germany b CNR-SPIN and Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte sant'Angelo, Via Cintia, 80126 Napoli, Italy c Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Genève 4, Switzerland d Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland e Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse 10, 8093 Zurich, Switzerland (literal)
Titolo
  • Influence of atomic termination on the LaAlO3/SrTiO3 interfacial polar rearrangement (literal)
Abstract
  • We report the results of second-harmonic optical spectroscopy of LaAlO 3 films grown on SrTiO3 (001) substrates having either TiO2 or SrO atomic terminations. The atomic termination is found to have a large effect on the observed spectra, with a strong dependence on the ?-2? light polarizations. These results are analyzed through a model based on symmetry-controlled selection rules and atomic orbital overlaps. The analysis shows that, as suspected from transport measurements, the SrO termination prevents the formation of a mobile interfacial electron gas. Yet, by explicitly probing and identifying the electronic states at the O2 --Ti3+ band gap we now obtain unique and direct evidence that this is caused by the absence of any detectable charge injection in the interfacial region rather than by carrier localization. © 2013 American Physical Society. (literal)
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