http://www.cnr.it/ontology/cnr/individuo/prodotto/ID280493

Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates (Articolo in rivista)

Type

Label

Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates (Articolo in rivista) (literal)

Anno

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Alternative label

M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7,9, M. Burghammer 8, A. Tagliaferri 7 and S. Sanguinetti 2 (2014)
Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates
in Nanotechnology (Bristol, Online); IOP PUBLISHING LTD, BRISTOL BS1 6BE (Regno Unito)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

M. Bollani 1, S. Bietti 2, C. FRIGERI 3, D. Chrastina 4, K. Reyes 5, P. Smereka 5, J. Mirecki-Millunchick 6, G. Vanacore 7,9, M. Burghammer 8, A. Tagliaferri 7 and S. Sanguinetti 2 (literal)

Pagina inizio

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Rivista

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Note

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1 CNR-IFN, L-NESS, via Anzani 42, I-22100 Como, Italy; 2 L-NESS, Dip. Scienza dei Materiali, Univ. Milano Bicocca, via Cozzi 53, I-20155 Milano, Italy; 3 CNR-IMEM, Parco Area delle Scienze, 37/A, I-43124 Parma, Italy; 4 L-NESS, Dip. di Fisica, Politecnico di Milano, via Anzani 42, I-22100 Como, Italy; 5 Department of Mathematics, University of Michigan, Ann Arbor, MI, USA; 6 Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA; 7 CNISM and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci, I-32-20133 Milano, Italy; 8 European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France (literal)

Titolo

Ordered Arrays of Embedded Ga Nanoparticles on Patterned Silicon Substrates (literal)

Abstract

We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. (literal)

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