Plasma treatment effects on Si and Si/dielectric film heterostructures (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Plasma treatment effects on Si and Si/dielectric film heterostructures (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Di Franco, C; Cioffi, N; Ditaranto, N; Vitiello, MS; Sibilano, M; Torsi, L; Scamarcio, G (2008)
  Plasma treatment effects on Si and Si/dielectric film heterostructures
  in Journal of materials processing technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Di Franco, C; Cioffi, N; Ditaranto, N; Vitiello, MS; Sibilano, M; Torsi, L; Scamarcio, G (literal)

Pagina inizio

• 462 (literal)

Pagina fine

• 466 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 206 (literal)

Rivista

• Journal of materials processing technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Di Franco, C.; Vitiello, M. S.; Sibilano, M.; Scamarcio, G.] Univ Bari, Dipartimento Interateneo Fis, CNR, INFM Reg Lab LIT, I-70126 Bari, Italy; [Cioffi, N.; Ditaranto, N.; Torsi, L.] Univ Bari, Dipartmento Chim, I-70126 Bari, Italy (literal)

Titolo

• Plasma treatment effects on Si and Si/dielectric film heterostructures (literal)

Abstract

• \"A multi-step plasma procedure for the fabrication of high-quality SiO2/Si interfaces and the functionalization of silicon dioxide surfaces has been developed for microelectronic manufacturing industry. The substrate activation based on a plasma-enhanced chemical vapour deposition (PECVD) has been developed in order to obtain high quality SiO2/Si heterostructures. The SiO2 films have been then exposed to additional PECVD processes in order to modify the dielectric surface by polar groups. The advantage of this method consists in the possibility of activating the substrate, depositing and functionalizing high-quality SiO2 films in a single run process, at low temperature, and by means of the same equipment. The reported method has also been exploited to produce device-quality silicon nitride/silicon heterostructures; preliminary results are shown. (C) 2007 Elsevier B.V. All rights reserved.\" (literal)

Prodotto di

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Autore CNR

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• MIRIAM SERENA VITIELLO (Persona)
• GAETANO SCAMARCIO (Persona)
• CINZIA DI FRANCO (Persona)

Insieme di parole chiave

• Keywords of "Plasma treatment effects on Si and Si/dielectric film heterostructures" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• GAETANO SCAMARCIO (Persona)
• CINZIA DI FRANCO (Persona)
• MIRIAM SERENA VITIELLO (Persona)

Prodotto

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of materials processing technology (Rivista)

Insieme di parole chiave di

• Keywords of "Plasma treatment effects on Si and Si/dielectric film heterostructures" (Insieme di parole chiave)