Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties (Articolo in rivista)

Type
Label
  • Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4867020 (literal)
Alternative label
  • Vittorio Foglietti, Nan Yang, Antonello Tebano, Carmela Aruta, Elisabetta Di Bartolomeo, Silvia Licoccia, Claudia Cantoni and Giuseppe Balestrino (2014)
    Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Vittorio Foglietti, Nan Yang, Antonello Tebano, Carmela Aruta, Elisabetta Di Bartolomeo, Silvia Licoccia, Claudia Cantoni and Giuseppe Balestrino (literal)
Pagina inizio
  • 081612 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1063/1.4867020 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 104 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-ISM Area di ricerca di Montelibretti Via Salaria, Km. 29,300, 00016 Monterotondo, RM, Italy CNR-SPIN and Department DICII, University of Roma \"Tor Vergata,\" Rome 00133, Italy NAST Center, University of Roma \"Tor Vergata,\" Rome 00133, Italy Department of Chemical Sciences and Technologies, University of Roma \"Tor Vergata,\" Rome 00133, Italy Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA (literal)
Titolo
  • Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties (literal)
Abstract
  • A study of the structure and transport properties of highly textured, epitaxial oriented BaZr0.8Y0.2O3-x thin films grown on NdGaO3(110) is reported. Films have been grown by pulsed laser deposition and their conductivity studied as a function of temperature and thickness. The results show an increased conductance as the sample thickness decreases. The measured conductivity corresponding to an in-plane conductivity of 20 S cm-1 has been systematically observed in the range of 550-600 °C for several 10 nm-thick films. The high values of conductivity are possibly related to the high densities of defects, mostly dislocations at the interface of the film with the substrate (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it