Electron spin resonance of substitutional nitrogen in silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electron spin resonance of substitutional nitrogen in silicon (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.89.115207 (literal)

Alternative label

• M. Belli (1), M. Fanciulli (2,1), D. Batani (3,2) (2014)
  Electron spin resonance of substitutional nitrogen in silicon
  in Physical review. B, Condensed matter and materials physics; APS, American physical society, College Park, MD (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Belli (1), M. Fanciulli (2,1), D. Batani (3,2) (literal)

Pagina inizio

• 115207(1) (literal)

Pagina fine

• 115204(8) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://journals.aps.org/prb/abstract/10.1103/PhysRevB.89.115207 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 89 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Laboratorio MDM, IMM-CNR, Via C. Olivetti, 2, 20864, Agrate Brianza (MB), Italy 2 Universit`a degli Studi di Milano-Bicocca, Dipartmento di Scienza dei Materiali, Via R. Cozzi 53, 20126, Milano, Italy 3 University Bordeaux, CEA, CNRS, CELIA (Centre Laser Intense at Applications), UMR 5107, F-33405 Talence, France (literal)

Titolo

• Electron spin resonance of substitutional nitrogen in silicon (literal)

Abstract

• The development of silicon-based nanoscale technology for the realization of single electron, single spin quantum devices demands deep donor-based systems to achieve a major breakthrough in the field: high-temperature operation. Here, we suggest that, despite some preparation difficulties, substitutional nitrogen in silicon (N_{Si}) represents an interesting candidate for this purpose, being observable by electron paramagnetic resonance (EPR) at room temperature. We report a study of the nature and dynamics of substitutional nitrogen in silicon, the so-called SL5 paramagnetic center, by X-band continuous-wave EPR, complemented by pulsed EPR. Both natural and ^{28}Si isotopically enriched nitrogen-doped silicon samples have been used, the latter providing an improvement in the accuracy of the spin Hamiltonian parameters. (literal)

Editore

• APS, American physical society (Editore)

Prodotto di

• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARCO FANCIULLI (Unità di personale esterno)
• MATTEO BELLI (Persona)

Insieme di parole chiave

• Keywords of "Electron spin resonance of substitutional nitrogen in silicon" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR di

• MARCO FANCIULLI (Unità di personale esterno)
• MATTEO BELLI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Editore di

• APS, American physical society (Editore)

Insieme di parole chiave di

• Keywords of "Electron spin resonance of substitutional nitrogen in silicon" (Insieme di parole chiave)