http://www.cnr.it/ontology/cnr/individuo/prodotto/ID2770
Energy band alignment at TiO2/Si interface with various interlayers (Articolo in rivista)
- Type
- Label
- Energy band alignment at TiO2/Si interface with various interlayers (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2885109 (literal)
- Alternative label
Perego, M; Seguini, G; Scarel, G; Fanciulli, M; Wallrapp, F (2008)
Energy band alignment at TiO2/Si interface with various interlayers
in Journal of applied physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Perego, M; Seguini, G; Scarel, G; Fanciulli, M; Wallrapp, F (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- \"[Perego, M.; Seguini, G.; Scarel, G.; Fanciulli, M.] INFM, CNR, MDM Natl Lab, I-20041 Agrate Brianza, MI, Italy; [Wallrapp, F.] Max Planck Inst Biochem Martinsried, Dept Membrane & Neurophys, D-82152 Munich, Germany (literal)
- Titolo
- Energy band alignment at TiO2/Si interface with various interlayers (literal)
- Abstract
- Anatase TiO2 films are grown on Si (100) by atomic layer deposition. Three different interlayers (Si3N4, Al2O3, and Ti-rich SiOx) between the TiO2 films and the Si substrate have been considered. The band alignment of the titanium oxide films with the silicon substrate is investigated by x-ray photoelectron spectroscopy (XPS), internal photoemission (IPE) spectroscopy, and optical absorption (OA) measurements. XPS analysis indicates that TiO2/Si heterojunctions with different interlayers (ILs) have different valence-band offsets (VBOs). A VBO value of 2.56 +/- 0.09 eV is obtained for the TiO2/Ti-rich SiOx/Si sample. Similarly, we obtain a VBO value of 2.44 +/- 0.09 and 2.73 +/- 0.10 eV for the TiO2/Si3N4/Si and TiO2/Al2O3/Si samples, respectively. According to IPE and OA measurements, the band gap of the as-grown TiO2 films is 3.3 +/- 0.1 eV for all the samples. Combining the XPS and IPE data, the conduction band offset values at the TiO2/Si heterojunction are found to be -0.2 +/- 0.1, -0.4 +/- 0.1, and -0.5 +/- 0.1 eV for the TiO2/Si3N4/Si, TiO2/Ti-rich SiOx/Si, and TiO2/Al2O3/Si samples, respectively. According to our experimental results, the band alignment of a TiO2 film with the underlying Si (100) substrate is clearly affected by the presence of an IL, suggesting the possibility to tune the band structure of a TiO2/Si heterojunction by selecting the proper IL. (c) 2008 American Institute of Physics. (literal)
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