http://www.cnr.it/ontology/cnr/individuo/prodotto/ID276858
Universal scaling of the order-parameter distribution in strongly disordered superconductors (Articolo in rivista)
- Type
- Label
- Universal scaling of the order-parameter distribution in strongly disordered superconductors (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/physrevb.87.184509 (literal)
- Alternative label
G. Lemarié (1,2); A. Kamlapure (3); D. Bucheli (2); L. Benfatto (2); J. Lorenzana (2); G. Seibold (4); S. C. Ganguli (3); P. Raychaudhuri (3); C. Castellani (2) (2013)
Universal scaling of the order-parameter distribution in strongly disordered superconductors
in Physical review. B, Condensed matter and materials physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- G. Lemarié (1,2); A. Kamlapure (3); D. Bucheli (2); L. Benfatto (2); J. Lorenzana (2); G. Seibold (4); S. C. Ganguli (3); P. Raychaudhuri (3); C. Castellani (2) (literal)
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- http://prb.aps.org/abstract/PRB/v87/i18/e184509 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- (1) Laboratoire de Physique Théorique UMR-5152, CNRS and Université de Toulouse, F-31062 France
(2) ISC-CNR and Department of Physics, Sapienza University of Rome, P.le A. Moro 2, 00185 Rome, Italy
(3) Tata Institute of Fundamental Research, Homi Bhabha Rd., Colaba, Mumbai 400005, India
(4) Institut Für Physik, BTU Cottbus, P.O. Box 101344, 03013 Cottbus, Germany (literal)
- Titolo
- Universal scaling of the order-parameter distribution in strongly disordered superconductors (literal)
- Abstract
- We investigate theoretically and experimentally the statistical properties of the inhomogeneous order-parameter distribution (OPD) at the verge of the superconductor-insulator transition (SIT). We find within two prototype fermionic and bosonic models for disordered superconductors that one can identify a universal rescaling of the OPD. By performing scanning-tunneling microscopy experiments in three samples of NbN with increasing disorder we show that such a rescaling also describes the experimental data with excellent accuracy. These results can provide a breakthrough in our understanding of the SIT. (literal)
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