Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Lu, HL; Scarel, G; Li, XL; Fanciulli, M (2008)
  Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors
  in Journal of crystal growth
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lu, HL; Scarel, G; Li, XL; Fanciulli, M (literal)

Pagina inizio

• 5464 (literal)

Pagina fine

• 5468 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 310 (literal)

Rivista

• Journal of crystal growth (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Lu, H. L.; Scarel, G.; Li, X. L.; Fanciulli, M.] CNR INFM MDM Natl Lab, I-20041 Agrate Brianza, Italy (literal)

Titolo

• Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors (literal)

Abstract

• We report on the atomic layer deposition (ALD) of MnO and NiO thin films on Si(100) using Mn(EtCP)(2) [EtCp = ethylcyclopentadienyl, (C2H5)C5H4] and Ni(EtCp)(2) in the temperature range of 150-300 degrees C. H2O or O-3 is selected as oxygen source for the depositions. The growth temperature (T-g) and oxygen source impact on the structure, electronic density, and impurity concentration for the as-grown MnO and NiO films have been studied using X-ray reflectivity, (XRR), grazing incidence X-ray diffraction (GIXRD), and Fourier transform infrared (FTIR) spectroscopy. A steady growth rate of 0.024-0.025 nm/cycle for the films grown using Mn(EtCP)(2) and H2O was observed in the T-g range of 250-300 degrees C. FTIR does not show any carbon impurities in the MnO films grown with H2O. The films grown using Mn(EtCp)(2) and O-3 at 300 degrees C exhibit poor adhesion on Si(100). NiO films with low amounts of contaminants are achieved using O-3 and at a T-g of 250 degrees C or above. The growth rate, however, is very high for films deposited at T-g = 150 degrees C and decreases significantly in films deposited at higher temperatures. In addition, no film growth was observed for the Ni(EtCp)(2)/H2O process. The as-grown MnO and NiO films prepared using H2O and O-3 as oxidizer, is shown, by GIXRD a polycrystalline cubic structure. (C) 2008 Published by Elsevier B.V. (literal)

Prodotto di

• Qubit a base di silicio o SiGe e studio di gas elettronici bidimensionali in dispositivi nanoelettronici (MD.P06.019.001) (Modulo)
• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Autore CNR

• HONG LIANG LU (Unità di personale esterno)
• GIOVANNA SCAREL (Unità di personale interno)
• MARCO FANCIULLI (Persona)

Insieme di parole chiave

• Keywords of "Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIOVANNA SCAREL (Unità di personale interno)
• MARCO FANCIULLI (Persona)
• HONG LIANG LU (Unità di personale esterno)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Qubit a base di silicio o SiGe e studio di gas elettronici bidimensionali in dispositivi nanoelettronici (MD.P06.019.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of crystal growth (Rivista)

Insieme di parole chiave di

• Keywords of "Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors" (Insieme di parole chiave)