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Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition (Articolo in rivista)
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- Label
- Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
Lu, HL; Scarel, G; Alia, M; Fanciulli, M; Ding, SJ; Zhang, DW (2008)
Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lu, HL; Scarel, G; Alia, M; Fanciulli, M; Ding, SJ; Zhang, DW (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- \"[Lu, H. L.; Ding, Shi-Jin; Zhang, David Wei] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China; [Lu, H. L.; Ding, Shi-Jin; Zhang, David Wei] Fudan Univ, Dept Microelect, Shanghai 200433, Peoples R China; [Lu, H. L.; Scarel, G.; Alia, M.; Fanciulli, M.] INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy (literal)
- Titolo
- Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition (literal)
- Abstract
- Thin NiO films are grown at 300 degrees C on Si (100) using atomic layer deposition. The dependence of annealing temperature on the optical properties of NiO films has been investigated using spectroscopic ellipsometry in the spectral region of 1.24-5.05 eV. It is found that the refractive index and thickness of NiO films are affected by high temperature annealing. The optical band gap of the as-deposited thin NiO film is determined to be 3.8 eV, which is almost independent of the annealing temperature. The indirect band gap of NiO film shifts toward lower photon energy with an increase in annealing temperature. (c) 2008 American Institute of Physics. (literal)
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