Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures (Contributo in atti di convegno)

Type
Label
  • Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures (Contributo in atti di convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Greco 1, F. Giannazzo 1, F. Iucolano 2, R. Lo Nigro 1, S. Scalese 1, P. Prystawko 3, M. Leszczy?ski 3, F. Roccaforte 1 (2013)
    Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures
    in 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE2013, Warnemuende (Germany), May26th - 29th, 2013
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Greco 1, F. Giannazzo 1, F. Iucolano 2, R. Lo Nigro 1, S. Scalese 1, P. Prystawko 3, M. Leszczy?ski 3, F. Roccaforte 1 (literal)
Pagina inizio
  • 117 (literal)
Pagina fine
  • 118 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE2013, Warrnemuende (Germany), May26th - 29th, 2013 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR-IMM, Catania (Italy) 2. STMicroelectronics, Catania (Italy) 3. Institute of High Pressure Physics - Unipress, Warsaw (Poland) (literal)
Titolo
  • Comparison between Ta- and Ti-based Ohmic contacts on AlGaN/GaN heterostructures (literal)
Abstract
  • In this paper, the structural and electrical evolution Ti- and Ta-based Ohmic contacts on AlGaN/GaN heterostructures upon annealing has been monitored. In particular, a comparison between Ta/Al and Ti/Al stacks was done, correlating the Ohmic behavior to the formation of new phases occurring respectively at 700 °C and 500 °C. The different electrical behavior has been discussed considering the interface microstructure. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Editore di
data.CNR.it