Influence of processing conditions on the behaviour of 4H-SiC MOSFETs (Contributo in atti di convegno)

Type
Label
  • Influence of processing conditions on the behaviour of 4H-SiC MOSFETs (Contributo in atti di convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Alternative label
  • F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2 (2013)
    Influence of processing conditions on the behaviour of 4H-SiC MOSFETs
    in 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE2013, Warnemuende (Germany), May26th - 29th, 2013
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Roccaforte 1, P. Fiorenza 1, F. Giannazzo 1, L.K. Swanson 1, M. Vivona 1, A. Frazzetto 2, M. Saggio 2 (literal)
Pagina inizio
  • 51 (literal)
Pagina fine
  • 52 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE2013, Warnemuende (Germany), May26th - 29th, 2013 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR-IMM, Catania (Italy) 2. STMicroelectronics, Catania (Italy) (literal)
Titolo
  • Influence of processing conditions on the behaviour of 4H-SiC MOSFETs (literal)
Abstract
  • This paper reports on the influence of the processing conditions on the behaviour of 4H-SiC MOSFETs. The impact of the SiC surface morphology (i.e., processing-induced roughness) and the effects of different post-deposition-annealing (PDA) of the gate oxide in N2O or POCl3 on the channel mobility are discussed. (literal)
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