Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Siegel, J; Gawelda, W; Puerto, D; Dorronsoro, C; Solis, J; Afonso, CN; de Sande, JCG; Bez, R; Pirovano, A; Wiemer, C (2008)
  Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Siegel, J; Gawelda, W; Puerto, D; Dorronsoro, C; Solis, J; Afonso, CN; de Sande, JCG; Bez, R; Pirovano, A; Wiemer, C (literal)

Pagina inizio

• 023516 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 103 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Siegel, J.; Gawelda, W.; Puerto, D.; Dorronsoro, C.; Solis, J.; Afonso, C. N.] CSIC, Inst Opt, E-28006 Madrid, Spain; [de Sande, J. C. G.] UPM, EUITT, Ingn Circuitos & Sistemas, Madrid 28031, Spain; [Bez, R.; Pirovano, A.] STMicroelect, I-20041 Agrate Brianza, Italy; [Wiemer, C.] CNR INFM, MDM Lab, I-20041 Agrate Brianza, Italy (literal)

Titolo

• Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation (literal)

Abstract

• Phase transformations of crystalline Ge2Sb2Te5 films upon pulsed laser irradiation have been studied using in situ reflectivity measurements with temporal resolution. Two different configurations allowed point probing with nanosecond temporal resolution and imaging with subpicosecond temporal and micrometer spatial resolution. The role of the pulse duration and laser fluence on the dynamics of the phase change and the degree of amorphization is discussed. Several advantageous features of femtosecond compared to nanosecond laser-induced amorphization are identified. Moreover, a high-resolution study of the amorphization dynamics reveals the onset of amorphization at moderate fluences to occur within similar to 100 ps after arrival of the laser pulse. At high fluences, amorphization occurs after similar to 430 ps and the molten phase is characterized by an anomalously low reflectivity value, indicative of a state of extreme supercooling. (C) 2008 American Institute of Physics. (literal)

Prodotto di

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Autore CNR

• CLAUDIA WIEMER (Persona)

Insieme di parole chiave

• Keywords of "Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Persona)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation" (Insieme di parole chiave)