Influence of microstructure on voids nucleation in nanoporous Ge (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Influence of microstructure on voids nucleation in nanoporous Ge (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.matlet.2013.01.017 (literal)

Alternative label

• Romano L, Impellizzeri G, Grimaldi MG (2013)
  Influence of microstructure on voids nucleation in nanoporous Ge
  in Materials letters (Gen. ed.)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romano L, Impellizzeri G, Grimaldi MG (literal)

Pagina inizio

• 74 (literal)

Pagina fine

• 77 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 96 (literal)

Rivista

• Materials letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy [ 2 ] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)

Titolo

• Influence of microstructure on voids nucleation in nanoporous Ge (literal)

Abstract

• This paper reports about the mechanism of porous formation in bulk crystalline Ge wafers, polycrystalline and amorphous Ge thin films as a consequence of Ge+ ion implantation at 300 keV, Ge+ fluence 5 x 10(15) cm(-2) or 1 x 10(16) cm(-2). Cross-section scanning electron microscopy and Rutherford backscattering spectrometry were used to characterize the nucleation mechanism of the nanoporous structure by revealing a uniform mechanism in the amorphous Ge thin layers, and a heterogeneous growth mechanism in bulk crystalline and poly-crystalline Ge substrates. The uniform growth is due to the presence of voids distributed over all the as-deposited amorphous films, which provide nucleation sites for the formation of the porous structure. Instead, the heterogeneous growth is catalyzed by the free surface and the film/substrate interface. (literal)

Prodotto di

• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARIA GRAZIA GRIMALDI (Persona)
• LUCIA ROMANO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Autore CNR di

• GIULIANA IMPELLIZZERI (Unità di personale interno)
• MARIA GRAZIA GRIMALDI (Persona)
• LUCIA ROMANO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials letters (Rivista)