Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4800781 (literal)

Alternative label

• Normann HB, Vines L, Privitera V, Skorupa W, Schumann T, Svensson BG, Monakhov EV (2013)
  Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Normann HB, Vines L, Privitera V, Skorupa W, Schumann T, Svensson BG, Monakhov EV (literal)

Pagina inizio

• 132108 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 13 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway [ 2 ] CNR IMM, I-95121 Catania, Italy [ 3 ] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany (literal)

Titolo

• Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells (literal)

Abstract

• We have investigated in-diffusion of phosphorus into monocrystalline silicon by depositing a phosphorus source on the surface followed by millisecond flash lamp annealing (FLA) to form shallow emitters for solar cells. By varying both the energy density of a 20 ms flash in the range from 62 to 132 J/cm(2) and the sample preheating, it is observed that FLA treatments can in-diffuse a high concentration of phosphorus atoms becoming electrically active. The most promising emitters are obtained after FLA in the energy range from 110 to 128 J/cm(2) including preheating at 300 degrees C with a peak concentration of 4 - 6 x 10(20) cm(-3). The emitter junction depth for these treatments is in the range of 100 nm to 200 nm, respectively. (literal)

Prodotto di

• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)