Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths (Articolo in rivista)

Type
Label
  • Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/lpor.201200043 (literal)
Alternative label
  • A. Shakoor, R. Lo Savio, P. Cardile, S.L. Portalupi, D. Gerace, K. Welma, S. Boninelli, G. Franzò, F. Priolo, T.F. Krauss, M. Galli and L. O' Faolain (2013)
    Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths
    in Laser & photonics reviews (Print); WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Shakoor, R. Lo Savio, P. Cardile, S.L. Portalupi, D. Gerace, K. Welma, S. Boninelli, G. Franzò, F. Priolo, T.F. Krauss, M. Galli and L. O' Faolain (literal)
Pagina inizio
  • 114 (literal)
Pagina fine
  • 121 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews, Fife, Scotland Univ Pavia, Dipartimento Fis, I-27100 Pavia, Italy CNR IMM MATIS, Catania, Italy Univ Catania, Dipartimento Fis & Astron, Catania, Italy (literal)
Titolo
  • Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths (literal)
Abstract
  • Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Delta lambda = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm(2) is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. (literal)
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