Synthesis and characterization of light emitting Eu2O3 films on Si substrates (Articolo in rivista)

Type
Label
  • Synthesis and characterization of light emitting Eu2O3 films on Si substrates (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jlumin.2011.12.040 (literal)
Alternative label
  • G. Bellocchi, G. Franzò, F. Iacona, S. Boninelli, M. Miritello, and F. Priolo (2012)
    Synthesis and characterization of light emitting Eu2O3 films on Si substrates
    in Journal of luminescence; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Bellocchi, G. Franzò, F. Iacona, S. Boninelli, M. Miritello, and F. Priolo (literal)
Pagina inizio
  • 3133 (literal)
Pagina fine
  • 3135 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 132 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • MATIS CNR IMM, I-95121 Catania, Italy Univ Catania, Dipartimento Fis & Astron, I-95121 Catania, Italy (literal)
Titolo
  • Synthesis and characterization of light emitting Eu2O3 films on Si substrates (literal)
Abstract
  • We have studied the optical and structural properties of Eu2O3 thin films grown by RF magnetron sputtering on Si substrates. The films have been annealed in O-2 ambient to improve their properties. The intensity of the photoluminescence (PL) signal detected at room temperature from the films depends on the temperature of the thermal process. The structural characterization of the films, performed by transmission electron microscopy, energy filtered transmission electron microscopy and x-ray diffraction, reveals that annealing processes performed at temperatures higher than 900 degrees C induce a mixing at the Eu2O3-Si interface, leading to the formation of a silicate-like layer, which is responsible for the observed decrease of the PL intensity. (literal)
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