Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista)

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  • Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lu, HL; Scarel, G; Wiemer, C; Perego, M; Spiga, S; Fanciulli, M; Pavia, G (2008)
    Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lu, HL; Scarel, G; Wiemer, C; Perego, M; Spiga, S; Fanciulli, M; Pavia, G (literal)
Pagina inizio
  • H807 (literal)
Pagina fine
  • H811 (literal)
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  • 155 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Lu, H. L.; Scarel, G.; Wiemer, C.; Perego, M.; Spiga, S.; Fanciulli, M.] CNR INFM MDM Natl Lab, I-20041 Agrate Brianza, MI, Italy; [Fanciulli, M.] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy; [Pavia, G.] STMicroelect, I-20041 Agrate Brianza, MI, Italy (literal)
Titolo
  • Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (literal)
Abstract
  • NiO films were grown on Si(100) by atomic layer deposition using Ni(Cp)(2) (Cp=cyclopentadienyl, C5H5) or Ni(EtCp)(2) [EtCp=ethylcyclopentadienyl, (C2H5)C5H4)] and ozone in the 150-300 degrees C temperature range. The growth temperature dependence of structure, electronic density, and impurity levels for the prepared NiO films was studied using X-ray reflectivity, X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, time of flight-secondary ion mass spectroscopy (ToF-SIMS), and transmission electron microscopy. The behavior of films deposited using Ni(Cp)(2) and Ni(EtCp)(2) is compared and discussed. NiO films with good stoichiometry and low amounts of contaminants are obtained at a growth temperature (T-g) of 250 degrees C or above. At a fixed T-g, the growth rate for NiO films deposited using Ni(Cp)(2) is higher than the one of films deposited using Ni(EtCp)(2). Furthermore, the growth rate for NiO deposited using Ni(Cp)(2) at T-g = 150 degrees C is 0.32 nm/cycle and decreases substantially in films deposited at higher temperatures. The electronic density of NiO films deposited at 300 degrees C is close to the one of bulk NiO (1.83 e(-)/A(3)). According to XRD and FTIR results, films deposited at T-g >= 200 degrees C have a simple cubic polycrystalline structure. Impurities in NiO films decrease with increasing T-g, as detected by ToF-SIMS. (literal)
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