Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista)

Type
Label
  • Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Pirovano, A; Varesi, E; Rushworth, S; Gawelda, W; Siegel, J (2008)
    Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
    in Chemistry of materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Pirovano, A; Varesi, E; Rushworth, S; Gawelda, W; Siegel, J (literal)
Pagina inizio
  • 3557 (literal)
Pagina fine
  • 3559 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 20 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Abrutis, Adulfas; Plausinaitiene, Valentina; Skapas, Martynas] Vilnius State Univ, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania; [Wiemer, Claudia; Salicio, Olivier] CNR INFM, MDM Lab, I-20041 Agrate Brianza, Italy; [Pirovano, Agostino; Varesi, Enrico] STMicroelect M6, I-20041 Agrate Brianza, Italy; [Rushworth, Simon] SAFC HiTech, Wirral CH62 3QF, Merseyside, England; [Gawelda, Wojciech; Siegel, Jan] CSIC, Laser Proc Grp, Inst Opt, E-28006 Madrid, Spain (literal)
Titolo
  • Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (literal)
Abstract
  • In this communication, we report on the successful growth of chalcogenide films with required functional properties for PCM applications by the combination of hot-wire MOCVD (HW-CVD) and pulsed liquid injection (l.i.) MOCVD.11 The elaborated method (HW-l.i.-CVD) is easily integrable because it does not require the use of plasma and/or hydrogen. The inherent key advantages of this deposition technique are the greater control of film composition, including doping possibility, and conformality over nonplanar structures, superior to those obtained by sputtering. Moreover, because of the catalytic decomposition of precursors and the use of diluted solutions, improved surface quality, higher growth rates, and wider precursor compatibility than with conventional thermal MOCVD are reached. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it