http://www.cnr.it/ontology/cnr/individuo/prodotto/ID2737
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista)
- Type
- Label
- Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Pirovano, A; Varesi, E; Rushworth, S; Gawelda, W; Siegel, J (2008)
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
in Chemistry of materials
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Abrutis, A; Plausinaitiene, V; Skapas, M; Wiemer, C; Salicio, O; Pirovano, A; Varesi, E; Rushworth, S; Gawelda, W; Siegel, J (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- \"[Abrutis, Adulfas; Plausinaitiene, Valentina; Skapas, Martynas] Vilnius State Univ, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania; [Wiemer, Claudia; Salicio, Olivier] CNR INFM, MDM Lab, I-20041 Agrate Brianza, Italy; [Pirovano, Agostino; Varesi, Enrico] STMicroelect M6, I-20041 Agrate Brianza, Italy; [Rushworth, Simon] SAFC HiTech, Wirral CH62 3QF, Merseyside, England; [Gawelda, Wojciech; Siegel, Jan] CSIC, Laser Proc Grp, Inst Opt, E-28006 Madrid, Spain (literal)
- Titolo
- Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (literal)
- Abstract
- In this communication, we report on the successful growth
of chalcogenide films with required functional properties for
PCM applications by the combination of hot-wire MOCVD
(HW-CVD) and pulsed liquid injection (l.i.) MOCVD.11 The
elaborated method (HW-l.i.-CVD) is easily integrable because
it does not require the use of plasma and/or hydrogen.
The inherent key advantages of this deposition technique are
the greater control of film composition, including doping
possibility, and conformality over nonplanar structures,
superior to those obtained by sputtering. Moreover, because
of the catalytic decomposition of precursors and the use of
diluted solutions, improved surface quality, higher growth
rates, and wider precursor compatibility than with conventional
thermal MOCVD are reached. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di