Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.83.235204 (literal)

Alternative label

• M. Belli, M. Fanciulli, N. V. Abrosimov (2011)
  Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin
  in Physical review. B, Condensed matter and materials physics; APS, American physical society, College Park, MD (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Belli, M. Fanciulli, N. V. Abrosimov (literal)

Pagina inizio

• 235204-1 (literal)

Pagina fine

• 235204-6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://prb.aps.org/abstract/PRB/v83/i23/e235204 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 83 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 23 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy Department of Material Science, University of Milano-Bicocca, Via R. Cozzi 53, I-20125 Milano, Italy Institute for Crystal Growth, Max-Born Strasse 2, D-12489 Berlin, Germany (literal)

Titolo

• Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin (literal)

Abstract

• Donors in silicon represent good candidates for the realization of several innovative devices exploiting classical as well as quantum information processing functionalities. Although most of the current work in the field is focused on the technological donors (P, As), the more exotic Bi offers interesting properties due to its nuclear spin and electronic structure.We present a detailed pulsed electron paramagnetic resonance study of the spin-spin and spin-lattice relaxation rates along with a full angular analysis of electron spin echo envelope modulation (ESEEM) spectra in bismuth-doped silicon samples having two different donor concentrations. The measurements were performed up to 40 K. ESEEM spectra provide information on the donor wave function via the leading superhyperfine interactions between donor nuclei and nearby 29Si coordination shells. The assignment of the most intense contributions was made on the basis of the angular variation of ESEEM resonances and elementary considerations on the deep donor states. (literal)

Editore

• APS, American physical society (Editore)

Prodotto di

• MD.P06.019.001 Nanostrutture di semiconduttori ed ossidi per applicazioni in nanoelettronica e spintronica (MD.P06.019.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MATTEO BELLI (Unità di personale esterno)
• MARCO FANCIULLI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.019.001 Nanostrutture di semiconduttori ed ossidi per applicazioni in nanoelettronica e spintronica (MD.P06.019.002) (Modulo)

Autore CNR di

• MARCO FANCIULLI (Unità di personale esterno)
• MATTEO BELLI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Editore di

• APS, American physical society (Editore)

Insieme di parole chiave di

• Keywords of "Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin" (Insieme di parole chiave)