Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Alternative label

• Hilary Masenda1, Krishanlal Bharuth-Ram2, Deena Naidoo1, Haraldur Páll Gunnlaugsson3, Torben Estman Mølholt4, Haflidi Petur Gislason4, Karl Johnston5, Roberto Mantovan6, Rainer Sielemann7, Guido Langouche8, Sveinn Olafson4, Gerd Weyer3 (2012)
  Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC
  in Hyperfine interactions (Dordr., Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Hilary Masenda1, Krishanlal Bharuth-Ram2, Deena Naidoo1, Haraldur Páll Gunnlaugsson3, Torben Estman Mølholt4, Haflidi Petur Gislason4, Karl Johnston5, Roberto Mantovan6, Rainer Sielemann7, Guido Langouche8, Sveinn Olafson4, Gerd Weyer3 (literal)

Pagina inizio

• 71 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://link.springer.com/article/10.1007/s10751-011-0438-x (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 208 (literal)

Rivista

• Hyperfine interactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. School of Physics, University of the Witwatersrand, WITS 2050, Johannesburg, South Africa 2. School of Physics, University of KwaZulu-Natal, Durban, 4041, South Africa 3. Institute of Physics and Astronomy, Aarhus University, 8000, Aarhus, Denmark 4. Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavík, Iceland 5. PH Division, ISOLDE/CERN, 1211, Geneva 23, Switzerland 6. Laboratorio MDM, IMM- CNR, 20041, Agrate Brianza (MB), Italy 7. Helmholtz-Zentrum-Berlin, 14109, Berlin, Germany 8. Instituut voor Kern-en Stralings fysika, University of Leuven, 3001, Leuven, Belgium (literal)

Titolo

• Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC (literal)

Abstract

• 119Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (SnSi) and interstitial sites (SnI) and in defect complexes near substitutional sites. The substitutional SnSi fraction increases from 25% at room temperature to 60% at 680 K. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROBERTO MANTOVAN (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ROBERTO MANTOVAN (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Hyperfine interactions (Rivista)