Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements (Contributo in atti di convegno) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Giannazzo F, Sonde S, Huntzinger JR, Tiberj A, Yakimova R, Raineri V, Camassel J (2010)
  Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements
  in MRS Fall Meeting, Boston Ma (USA), 30 November 2009 through 4 December 2009
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F, Sonde S, Huntzinger JR, Tiberj A, Yakimova R, Raineri V, Camassel J (literal)

Pagina inizio

• 20 (literal)

Pagina fine

• 25 (literal)

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• cited By (since 1996)0; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@40d186ca ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@7be85904 Through org.apache.xalan.xsltc.dom.DOMAdapter@532c5529; Conference Code:82059 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-79952046300&partnerID=40&md5=4b35ce22964854d90e6985393a28bae1 (literal)

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• 1205 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

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• 6 (literal)

Note

• Scopu (literal)

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• CNR -IMM, Strada VIII, 5, 95121, Catania, Italy; Scuola Superiore di Catania, Via San Nullo, 5/I, 95123, Catania, Italy; GES, CNRS, Université Montpellier 2, 34095 Montpellier cedex 5, France; IFM, Linkoping University, Linkoping, Sweden (literal)

Titolo

• Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements (literal)

Abstract

• Conductive Atomic Force Microscopy was applied to study the lateral uniformity of current transport at the interface between graphene and 4H-SiC, both in the case of epitaxial graphene (EG) grown on the Si face of 4H-SiC and in the case of graphene exfoliated from HOPG and deposited (DG) on the same substrate. This comparison is aimed to investigate the role played by the C-rich buffer layer present at EG/4H-SiC interface and absent in the case of DG/4H-SiC. The distribution of the local Schottky barrier heights at EG/4H-SiC interface (? EG) was compared with the distribution measured at DG/4H-SiC interface (? DG), showing that ? EG (0.36±0.1eV) is ~0.49eV lower than ? DG (0.85 ± 0.06eV). This difference is explained in terms of the Fermi level pinning ~0.49eV above the Dirac point in EG, due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the buffer layer. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Parole chiave di "Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)

Insieme di parole chiave di

• Parole chiave di "Lateral uniformity of the transport properties of graphene/4H-SiC (0001) interface by nanoscale current measurements" (Insieme di parole chiave)