HfO2-ZrO2 Doped Silica Thin Films by XPS (Articolo in rivista)

Type
Label
  • HfO2-ZrO2 Doped Silica Thin Films by XPS (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/11.20040402 (literal)
Alternative label
  • Armelao L.; Gross S.; Tondello E.; Zattin E. (2003)
    HfO2-ZrO2 Doped Silica Thin Films by XPS
    in Surface science spectra
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Armelao L.; Gross S.; Tondello E.; Zattin E. (literal)
Pagina inizio
  • 157 (literal)
Pagina fine
  • 163 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://scitation.aip.org/content/avs/journal/sss/10/1/10.1116/11.20040402 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 10 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1,2 : ISTM-CNR and INSTM, University of Padova, Department of Chemistry, Via Marzolo, 1-35131 Padova, Italy / 3,4 :INSTM, University of Padova, Department of Chemistry, Via Marzolo, 1-35131 Padova, Italy (literal)
Titolo
  • HfO2-ZrO2 Doped Silica Thin Films by XPS (literal)
Abstract
  • Silica thin films embedding ZrO2 and HfO2 were prepared by spin-coating on silica glass via a modified sol-gel processing. The novel synthetic route is based on the co-polymerization of two organically modified oxozirconium and oxohafnium clusters ~M4O2~OMc!12 with M 5 Zr, Hf and OMc 5 OC~O!-C~CH3!5CH2!! with ~methacryloxypropyl!trimethoxysilane ~MAPTMS!. The crystalline clusters, which are the precursors for the corresponding metal oxides ~MO2! were prepared via the sol-gel route by reacting zirconium or hafnium butoxide with methacrylic acid. The copolymerization of the cluster with previously prehydrolyzed methacrylate-functionalized siloxane, allows the anchoring of the oxoclusters to the forming silica network. Thin films were prepared starting from a THF ~tetrahydrofurane! solution with molar ratios Hf4O2~OMc!12 : Zr4O2~OMc!12:MAPTMS of 1:1:88. After deposition, the films were annealed 3 h at 800 °C in air to promote the decomposition of the hafnium and zirconium oxoclusters to give the corresponding HfO2 and ZrO2 oxides. The obtained HfO2-ZrO2-SiO2 films resulted transparent, homogeneous and displayed a very good adhesion to the substrate. The composition of the films was investigated by secondary ionization mass spectrometry ~SIMS! and x-ray photoelectron spectroscopy ~XPS!. The depth profiles evidenced a very homogenous distribution of both zirconium or hafnium species within the whole silica films and sharp film-substrate interfaces. As far as XPS analyses are concerned, the main XPS core-levels were analyzed for the annealed sample and the formation of hafnium and zirconium oxides was evidenced. (literal)
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