http://www.cnr.it/ontology/cnr/individuo/prodotto/ID273182
HfO2-ZrO2 Doped Silica Thin Films by XPS (Articolo in rivista)
- Type
- Label
- HfO2-ZrO2 Doped Silica Thin Films by XPS (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1116/11.20040402 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Armelao L.; Gross S.; Tondello E.; Zattin E. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://scitation.aip.org/content/avs/journal/sss/10/1/10.1116/11.20040402 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1,2 : ISTM-CNR and INSTM, University of Padova, Department of Chemistry, Via Marzolo, 1-35131 Padova, Italy /
3,4 :INSTM, University of Padova, Department of Chemistry, Via Marzolo, 1-35131 Padova, Italy (literal)
- Titolo
- HfO2-ZrO2 Doped Silica Thin Films by XPS (literal)
- Abstract
- Silica thin films embedding ZrO2 and HfO2 were prepared by spin-coating on silica glass via a
modified sol-gel processing. The novel synthetic route is based on the co-polymerization of two
organically modified oxozirconium and oxohafnium clusters ~M4O2~OMc!12 with M 5 Zr, Hf and
OMc 5 OC~O!-C~CH3!5CH2!! with ~methacryloxypropyl!trimethoxysilane ~MAPTMS!. The
crystalline clusters, which are the precursors for the corresponding metal oxides ~MO2! were
prepared via the sol-gel route by reacting zirconium or hafnium butoxide with methacrylic acid. The
copolymerization of the cluster with previously prehydrolyzed methacrylate-functionalized
siloxane, allows the anchoring of the oxoclusters to the forming silica network. Thin films were
prepared starting from a THF ~tetrahydrofurane! solution with molar ratios Hf4O2~OMc!12 :
Zr4O2~OMc!12:MAPTMS of 1:1:88. After deposition, the films were annealed 3 h at 800 °C in air
to promote the decomposition of the hafnium and zirconium oxoclusters to give the corresponding
HfO2 and ZrO2 oxides. The obtained HfO2-ZrO2-SiO2 films resulted transparent, homogeneous
and displayed a very good adhesion to the substrate. The composition of the films was investigated
by secondary ionization mass spectrometry ~SIMS! and x-ray photoelectron spectroscopy ~XPS!.
The depth profiles evidenced a very homogenous distribution of both zirconium or hafnium species
within the whole silica films and sharp film-substrate interfaces. As far as XPS analyses are
concerned, the main XPS core-levels were analyzed for the annealed sample and the formation of
hafnium and zirconium oxides was evidenced. (literal)
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