Local electrical properties of the 4H-SiC(0001)/graphene interface (Articolo in rivista)

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Label
  • Local electrical properties of the 4H-SiC(0001)/graphene interface (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.679-680.769 (literal)
Alternative label
  • Sonde, S.a b and Vecchio, C.a b and Giannazzo, F.a and Yakimova, R.c and Rimini, E.a d and Raineri, V.a (2011)
    Local electrical properties of the 4H-SiC(0001)/graphene interface
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sonde, S.a b and Vecchio, C.a b and Giannazzo, F.a and Yakimova, R.c and Rimini, E.a d and Raineri, V.a (literal)
Pagina inizio
  • 769 (literal)
Pagina fine
  • 776 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • cited By (since 1996)2; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@347ae053 ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@6f1d840f Through org.apache.xalan.xsltc.dom.DOMAdapter@7ac92dc6; Conference Code:84545 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-79955093860&partnerID=40&md5=e5d48a133e6b56359c0842e74a5d4d8b (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 679-680 (literal)
Rivista
Note
  • Scopu (literal)
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  • CNR-IMM, Stradale primosole, 50, 95121, Catania, Italy; Scuola Superiore di Catania, Via San Nullo, 5/i, 95123, Catania, Italy; IFM, Linkoping University, Linkoping, Sweden; Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia, 64, 95123 Catania, Italy (literal)
Titolo
  • Local electrical properties of the 4H-SiC(0001)/graphene interface (literal)
Abstract
  • Local current transport across graphene/4H-SiC was studied with nanometric scale lateral resolution by Scanning Current Spectroscopy on both graphene grown epitaxially on 4H-SiC(0001) (EG-SiC) and graphene exfoliated from highly oriented pyrolitic graphite and deposited on 4H-SiC(0001) (DG-SiC). The study revealed that the Schottky banier height (SBH) of EG/4H-SiC(0001) is lowered by ~0.49eV. This is explained in terms of Fermi-level pinning above the Dirac point in EG due to the presence of positively charged states at the interface between Si face of 4H-SiC and carbon-rich buffer layer. Furthermore, Scanning Capacitance Spectroscopy based method allowed evaluating local electron mean free path (l gr) in graphene. l gr in EG-SiC was observed to be, on average, ~0.4 times that in DG-SiC and exhibited large point-to-point variations due to presence of laterally homogeneous positively charged buffer layer at the interface. However, l gr in graphene on SiC was observed to be larger than on standard SiO 2 samples (DG-SiO 2), which is explained by better dielectric screening of charged impurities and lower surface polar phonon scattering at the graphene/substrate interface. (c) (2011) Trans Tech Publications. (literal)
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