Doping dependence of self-diffusion in germanium and the charge states of vacancies (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Doping dependence of self-diffusion in germanium and the charge states of vacancies (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4811442 (literal)

Alternative label

• Sudkamp T, Bracht H, Impellizzeri G, Hansen JL, Larsen AN, Haller EE (2013)
  Doping dependence of self-diffusion in germanium and the charge states of vacancies
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sudkamp T, Bracht H, Impellizzeri G, Hansen JL, Larsen AN, Haller EE (literal)

Pagina inizio

• 242103 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 24 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany [ 2 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy [ 3 ] Univ Aarhus, Dept Phys & Astron, DK-8000 Aarhus, Denmark [ 4 ] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA (literal)

Titolo

• Doping dependence of self-diffusion in germanium and the charge states of vacancies (literal)

Abstract

• Self-diffusion in boron-doped germanium has been studied at temperatures between 526 and 749 degrees C with secondary ion mass spectrometry. Self-diffusion under acceptor doping is retarded compared to intrinsic conditions. This demonstrates the contribution of charged vacancies in self-diffusion. Taking into account the dominance of doubly negatively charged vacancies under donor doping, the doping dependence of self-diffusion is best described with an inverse level ordering for singly and doubly negatively charged vacancies for all doping conditions. The level ordering explains the dominance of doubly charged vacancies under donor doping and their decreasing contribution with increasing acceptor doping until neutral vacancies mediate self-diffusion. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Autore CNR

• GIULIANA IMPELLIZZERI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Autore CNR di

• GIULIANA IMPELLIZZERI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)