Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs (Articolo in rivista)

Type
Label
  • Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/JDT.2013.2280973 (literal)
Alternative label
  • Valletta A, Mariucci L, Pecora A, Maiolo L, Brotherton SD, Fortunato G (2013)
    Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs
    in Journal of display technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Valletta A, Mariucci L, Pecora A, Maiolo L, Brotherton SD, Fortunato G (literal)
Pagina inizio
  • 764 (literal)
Pagina fine
  • 769 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 9 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Rome (literal)
Titolo
  • Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs (literal)
Abstract
  • Electrical characteristics of fully self-aligned gate overlapped lightly doped drain (FSA-GOLDD) polysilicon TFTs, fabricated with a spacer technology providing submicron (0.35 mu m) LDD regions, have been analyzed by using two-dimensional numerical simulations. The numerical analysis was used to explain the observed reduced kink effect and short channel effects presented by FSA GOLDD devices, compared to SA devices. The reduction of the kink effect has been attributed to the reduced impact ionization rate, and related to reduced electric fields at the channel/LDD junction. In addition, the role of the LDD dose on the kink effect has been also investigated, clarifying the observed current inflection occurring in the kink effect regime and the LDD dose dependence of the breakdown. Reduced short channel effects were attributed to reduced floating body effects, since drain induced barrier lowering was apparently not affected by the SA GOLDD structure, when compared to SA devices. (literal)
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